Reaction Bonded Silicon Carbide Tile Featured Image

I-Rection Bonded Silicon Carbide Tile

Inkcazelo emfutshane:

I-Reaction bounded silicon carbide ekwaziwa ngokuba yisiliconized silicon carbide okanye iSiSiC, yenziwa ngokungena ngaphakathi imixube eyenziwe ngemixube ye-SiC kunye nekhabhoni enesilicon elulwelo.I-silicon iphendula kunye nekhabhoni eyenza i-SiC eninzi edibanisa amasuntswana e-SiC okuqala, Nayiphi na i-silicon engaphezulu igcwalisa ii-pores ezisele emzimbeni kwaye ivelise i-SiC-Si edibeneyo edibeneyo, Ukungena ngaphakathi kunika imathiriyeli indibaniselwano ekhethekileyo yomatshini, i-thermal, kunye nombane. iipropati.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Izinto eziluncedo kwiReaction Bonded Silicon Carbide

1) Ubuninzi obuphantsi.
2) Ukumelana nokubola.
3) Ukugqoka ukuxhathisa.
4) Ukumelana ne-oxidation.
5) Ukuxhatshazwa kwe-abrasion.
I-6) Ukuchasana kakuhle kwe-thermal shock (ngenxa ye-coefficient yokwandisa i-thermal ephantsi kunye ne-conductivity ephezulu ye-thermal).
7) Amandla agqwesileyo kwiqondo lokushisa eliphezulu.
I-8) Ulawulo olufanelekileyo lwe-dimensional yeemilo ezinzima.

Nxiba iimveliso ezixhathisayo: ipleyiti ye-silicon ye-carbide, isitena se-Silicon carbide, i-Pipe lining, i-Pipe Cone, i-cyclone, njl.
Ifenitshala yeKiln: Ipleyiti, iBeam, Roller, Burner Nozzle, umqadi ojikelezayo, umqadi osisikwere, umngxunya womngxunya.
Abanye: Imilomo ye-Desulfurization
Ukusetyenziswa kweReaction Bonded Silicon Carbide:
I-Reaction bounded silicon carbide ibonakalise ukuba lolona khetho lubalaseleyo lwemathiriyeli kwizicelo zokunxiba ezinje ngeelayini zemibhobho, iiNozzles, imibhobho yokulawula ukuqukuqela kunye nezinto ezinkulu zokunxiba emigodini kunye namanye amashishini.

Eyona Parameter

Iipropati	Iiyunithi	SiSiC/RBSIC
Ubuninzi bobuninzi (SiC)	V01%	≥85
Unizi lolwapho kuyiwa khona	g/cm³	3.01
I-porosity ebonakalayo	%	＜0.1
Imodyuli yokugqabhuka kwi-20℃	Mpa	250
Imodyuli yokugqabhuka kwi-1200℃	Mpa	280
Imodyuli ye-elasticity kwi-20℃	Gpa	330
Ukuqina kokwaphuka	Mpa*m1/2	3.3
I-Thermal Conductivity kwi-1200℃	wm^-1.k^-1	45
Ukwandiswa kweThermal kwi-1200 ℃	ii×10^-6/℃	4.5
Ukumelana nokothuka kwe-Thermal kwi-1200 ℃		Kakuhle kakhulu
I-Coefficient yokushisa ukushisa		<0.9
Ubushushu bokusebenza obuphezulu	℃	1350

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